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Arrow s engineering services division eInfochips and Infineon Technologies have launched a fast charger reference platform to accelerate the development of fast charging EV tech. ....
Infineon Technologies has upgraded its EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (RDS(on)) of 11mΩ in an EasyDUAL 1B package and 6mΩ in an EasyDUAL 2B package. ....
Infineon upgrades CoolSiC modules with AIN ceramic Infineon has upgraded its EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. The EasyDUAL modules FF11MR12W1M1 B70 and FF6MR12W2M1 B70 are equipped with the latest CoolSiC MOSFET technology that features superior gate-oxide reliability. With the improved thermal conductivity of the DCB material, the thermal resistance to the heat sink (R thJH) can be lowered by up to 40%. ....
April 29, 2021 New EasyDUAL™ CoolSiC™ MOSFET power modules with high-performance ceramic enable increased power density and more compact designs Munich, Germany – 29 April 2021 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has upgraded the EasyDUAL™ CoolSiC™ MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. With high-performance ceramic, the 1200 V devices are suitable for high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers. The EasyDUAL modules FF11MR12W1M1 B70 and FF6MR12W2M1 B70 are equipped with the latest CoolSiC MOSFET technology that features superior gate-oxide reliability. With the improved thermal conductivity of the DCB material, the thermal resistance ....