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Substitutional doping of 2D semiconductor for broadband photodetector

Substitutional doping of 2D semiconductor for broadband photodetector
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Low-Power, High-Performance Electronics with Nanosheet Material

The development of a high-conductivity material by a team of researchers in China could significantly lower contact resistance and Schottky barrier height in crucial areas of electronic and optoelectronic microchips, opening the door for computer and digital imaging parts that use less power in relation to their performance than current chipsets.

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