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DDR4/3 PHY in Samsung (14nm, 11nm, 10nm, 8nm)

The Synopsys DDR4/3 PHY is a complete physical layer IP interface (PHY) solution for enterprise-class ASIC, ASSP, and system-on-chip (SoC) applications . ....

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USB 3.1 PHY (10G/5G) in Samsung (14nm, 11nm, 10nm, 8nm, SF5, SF5A, SF4E)

The Synopsys SuperSpeed 3.1 USB IP solution is based on the USB 3.0 specification from the USB Implementer Forum. The comprehensive USB 3.1 IP offering . ....

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USB 3.1 PHY (10G/5G) in Samsung (14nm, 10nm, 11nm, 8nm, 5nm)

Synopsys DesignWare USB 3.1 PHY IP provides designers with the industry s best combination of low area and low power with support for the leading process . ....

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USB 3.0 femtoPHY in Samsung (14nm, 11nm, 10nm)

The Synopsys DesignWare® USB 3.0 femtoPHY and DesignWare® USB-C 3.0 femtoPHY provide designers with a complete physical (PHY) layer IP solution for . ....

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USB 2.0 femtoPHY in Samsung (14nm, 11nm, 8nm, 7nm, 5nm)


USB 2.0 femtoPHY in Samsung (14nm, 11nm, 8nm, 7nm, 5nm)
The Synopsys DesignWare® USB 2.0 femtoPHY provides designers with a complete physical (PHY) layer IP solution for low-power mobile and consumer applications such as smartphones, tablets, digital TVs, and media players. Offering reduced silicon cost and longer battery life, the DesignWare USB 2.0 femtoPHY IP delivers 50% smaller die area and minimizes active and suspend power consumption.
The DesignWare USB 2.0 femtoPHY implements the latest USB battery charger version 1.2 and USB On-The-Go (OTG) version 2.0 specifications from the USB Implementer’s Forum (USB-IF).
Architected for the industry’s most advanced 1.8V process technologies, the USB 2.0 femtoPHY is designed with features created to minimize effects due to variations in foundry process, device models, packages, and board parasitics. ....

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