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Toshiba develops SiC MOSFET with embedded Schottky barrier d
Toshiba develops SiC MOSFET with embedded Schottky barrier d
Toshiba develops SiC MOSFET with embedded Schottky barrier diode that delivers low on-resistance and high reliability
Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field ...
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