3 months ago High voltage GaN HEMTs for hi-rel applications now available in lower current 15 A and 30 A versions MILPITAS, Calif.–(BUSINESS WIRE)–Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of products based on GaN Systems technology. The two new high-power HEMTs, TDG650E30B and TDG650E15B, deliver lower current performance of 30- and 15-amp respectively, while the original 650 V introduced last year, the TDG650E60, delivers 60 A. These 650 V GaN HEMTs are the highest voltage GaN power devices available on the market for demanding high-reliability military, avionics, and space applications. They are an ideal fit for applications like power supply, motor control, and half bridge topologies.