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Micron Unveils UFS 4.0 Mobile Storage Using 232-Layer NAND F
Micron Unveils UFS 4.0 Mobile Storage Using 232-Layer NAND F
Micron Unveils UFS 4.0 Mobile Storage Using 232-Layer NAND For Huge Bandwidth Gains
Devices using these new NAND chips will benefit from double speed transfers compared to the previous gen UFS 3.1 solutions.
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