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Stress-free path to stress-free metallic films paves the way for next-gen circuitry

 E-Mail IMAGE: (top left) An illustration of the HiPIMS process (top right) The energy distribution of tungsten ions arriving at the substrate over time. At short times, there are a large proportion. view more  Credit: Tokyo Metropolitan University Tokyo, Japan - Researchers from Tokyo Metropolitan University have used high power impulse magnetron scattering (HiPIMS) to create thin films of tungsten with unprecedentedly low levels of film stress. By optimizing the timing of a substrate bias pulse with microsecond precision, they minimized impurities and defects to form crystalline films with stresses as low as 0.03 GPa, similar to those achieved through annealing. Their work promises efficient pathways for creating metallic films for the electronics industry.

Activation of Sympathetic Signaling in Macrophages Blocks Systemic Inflammation and Protects against Renal Ischemia-Reperfusion Injury

Activation of Sympathetic Signaling in Macrophages Blocks Systemic Inflammation and Protects against Renal Ischemia-Reperfusion Injury
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