MIL-OSI: Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry s First 176-Layer NAND and 1-Alpha DRAM foreignaffairs.co.nz - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from foreignaffairs.co.nz Daily Mail and Mail on Sunday newspapers.
Micron Technology, Inc., today unveiled memory and storage innovations across its portfolio based on its industry-leading 176-layer NAND and 1α (1-alpha) DRAM technology, as well as the industry’s first Universal Flash Storage (UFS) 3.1 solution for automotive applications. The new portfolio additions deliver on the company’s vision of accelerating data-driven insights through innovations in memory and storage that enable new capabilities from the data center to the intelligent edge. Micron President and CEO Sanjay Mehrotra made the announcements during a Computex keynote, in which he shared a sweeping vision for computing innovation and the central role memory and storage play in enabling enterprises to seize the full potential of the data economy.
Micron Accelerates Breakthrough Platform Innovation With Advancements Across Industry s First 176-Layer NAND and 1-Alpha DRAM forextv.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from forextv.com Daily Mail and Mail on Sunday newspapers.
Intel – summary of Innovation Unleashed at Computex 21 - CPU - News hexus.net - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from hexus.net Daily Mail and Mail on Sunday newspapers.