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Credit: @Science China Press The rapid development of silicon-based transistors leads to its integration getting closer to the limit of Moore s law. Graphene is expected to become the next generation of mainstream chip materials due to its ultra-high carrier mobility. However, it is difficult to obtain a high on/off current ratio for intrinsic graphene-based transistor owing to the absence of bandgap. Graphene nanoribbons, which possess a tunable bandgap and unique optoelectrical properties, have attracted extensive attention and exploration. Nowadays, the preparation of graphene nanoribbons is underdeveloped, and common strategies include the clip of carbon materials (graphene films, carbon nanotubes, or graphite) and direct-growth on a specific substrate surface. All these methods are inspiring but also exhibit narrow scope they require concession steps to prepare precursors or pre-functionalize substrate as templates. The hundreds of nanometers in length, alignment problem and c

Xiahong zhouJianyao huangLe caiXudong xueZhiping xuMechanics laboratoryNational natural science foundation of chinaInstitute of chemistryDepartment of engineering mechanicsNational scienceTsinghua universityChinese academy of sciencesBeijing based national science reviewChinese academyBeijing chinaApplied mechanics laboratory