Win Semiconductors board approves plan for NT$10 billion Kaohsiung fab
By Chen Cheng-hui / Staff reporter
Win Semiconductors Corp (穩懋半導體), the world’s largest pure-play gallium arsenide foundry, on Friday said its board of directors had approved a plan to invest NT$10 billion (US$358.3 million) to build a fab at the Southern Taiwan Science Park’s (南部科學工業園) branch campus in Kaohsiung’s Lujhu District (路竹) over the next three years.
“To meet the needs of long-term operation and growth, the company planned to build the plant in Southern Taiwan Science Park located in Kaohsiung,” the Linkou District (林口), New Taipei City-based firm wrote in a regulatory filing.
Win Semiconductors bleak on revenue
UNFAVORABLE CONDITIONS: Some of the company’s factories are scheduled to enter annual maintenance this quarter, which would suggest a decline in wafer shipments
By Lisa Wang / Staff reporter
Win Semiconductors Corp (穩懋半導體), the world’s largest pure-play gallium arsenide foundry, yesterday said it expects a low-teens percentage decline in revenue this quarter as demand from smartphones weakens during the slack season and unfavorable foreign-exchange rates continue to affect its top-line performance.
The company reported revenue of NT$6.86 billion (US$241.75 million) for October to December last year, with about 40 to 45 percent of that coming from power amplifiers for smartphones.
Forex rates push Win Semiconductors to revise Q4 gross margin
By Lisa Wang / Staff reporter
Win Semiconductors Corp (穩懋半導體), the world’s largest pure-play gallium arsenide foundry, yesterday revised downward its gross margin forecast for last quarter due to the substantial appreciation of the New Taiwan dollar against the US dollar.
Win Semiconductors was the first among local electronics companies to downwardly adjust its gross margin, blaming volatility of foreign exchange rates.
In the final quarter of last year, the NT dollar appreciated about 2.12 percent to NT$28.508 versus the US greenback.
A wafer sits under a microscope in an undated photograph.