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Researchers Develop Graphene-Driving Strain Engineering Method

AlN-based materials’ straight band gap makes them ideal for producing DUV optoelectronic devices, which have a variety of applications in curing, water and air disinfection, medicine, and biochemistry, among others.

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Nanotechnology Now - Press Release: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode Peer-Reviewed Publication

Nanotechnology Now - Press Release: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode Peer-Reviewed Publication
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