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IBM beats finFETs with vertical CMOS at IEDM
IBM revealed vertical FET CMOS logic at a sub-45nm gate pitch on bulk silicon wafers at theĀ IEEE International electron devices meeting in San Francisco th
Si sige
Verticaltransport nanosheet
Contacted gate pitch
Diffusion break
Vertical transport nanosheet
Zero diffusion break
Transport nanosheets
Contacted gate
Zero diffusion breaks
Pitch scaling challenges
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