By identifying the controllable nonlinear Hall effect in twisted bilayer graphene, a group of international researchers led by The University of Hong Kong (HKU) and The University of Science and Technology (HKUST) achieved a significant advancement in the field of quantum materials.
In an article published in ACS Applied Materials & Interfaces, researchers demonstrated the creation of higher-order artificial oxide heterostructure based on various materials and symmetries.
An article published in Communications Physics discussed partially filled states of flat-band structures induced by thermodynamically stable corrugation of the graphene bilayer via an interlayer twist.
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