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<p>Donor doping into a mother material with disordered intrinsic oxygen vacancies, instead of the widely used strategy of acceptor doping into a material without oxygen vacancies, can greatly enhance the conductivity and stability of perovskite-type proton conductors at intermediate and low temperatures of 250&ndash;400 &deg;C, as demonstrated by Tokyo Tech scientists (e.g. 10 mS/cm at 320 &deg;C). This innovative approach provides a new design direction for proton conductors for fuel cells and electrolysis cells.</p>

Masatomo yashimaKei saitoPcfcs pcecsMethod of researchTokyo institute of technology techNature communicationsTokyo institute of technologyTokyo techProfessor masatomo yashimaTokyo instituteProton conductivityDisordered intrinsic oxygen