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Vishay Intertechnology Reports Fiscal Fourth Quarter And Full Year 2023 Results

Vishay Intertechnology Reports Fiscal Fourth Quarter And Full Year 2023 Results
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Vishay Intertechnology Declares Quarterly Dividend

Vishay Intertechnology Declares Quarterly Dividend
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Digi-Key Electronics Named Vishay North America Catalog Distributor of the Year and Catalog Semiconductor Distributor of the Year

Vishay Intertechnology : Best in Class 30 V N-Channel MOSFET Delivers High Power Density and Efficiency for Isolated and Non-Isolated Topologies

MALVERN, Pa. - May 24, 2021 - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a versatile new 30 V n-channel TrenchFET ® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK ® 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 m Ω at 10 V, a 5 % improvement over the previous generation product. In addition, the device delivers on-resistance of 1.5 m Ω at 4.5 V, while its 29.8 m Ω nC on-resistance times gate charge at 4.5 V - a critical figure of merit (FOM) for MOSFETs used in switching applications - is one of the lowest on the market.

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