The public s appetite for inexpensive and powerful electronic devices continues to grow. While silicon-based semiconductors have been key to satiating this demand, a superior alternative could be wide-bandgap semiconductors. .
Semiconductor advancement could lead to low-cost, flexible electronic devices buffalo.edu - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from buffalo.edu Daily Mail and Mail on Sunday newspapers.
University at Buffalo
Goyal’s research has had a profound impact on the field of high-temperature superconductivity, both in fundamental materials science and in the transition of scientific discoveries from the laboratory to the marketplace.
BUFFALO, N.Y. Amit Goyal, an internationally recognized materials scientist and director of the University at Buffalo’s RENEW Institute, was elected Fellow of the Institute of Electrical and Electronics Engineers (IEEE), a professional organization dedicated to advancing technology and fostering technological innovation for the benefit of humanity.
The honor, effective Jan. 1, recognizes Goyal “for contributions to high-temperature superconducting materials.”
The designation is conferred by the IEEE Board of Directors upon scientists with an outstanding record of accomplishments in IEEE fields of interest. The total number selected in any one year cannot exceed one-tenth of 1 percent of the total voting membership. IEEE fellowshi