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Latest Vishay Intertechnology Fourth-Generation 600 V E Series MOSFET Provides Industry-Low RDS(ON)Qg FOM of 2 8 ΩnC

Latest Vishay Intertechnology Fourth-Generation 600 V E Series MOSFET Provides Industry-Low RDS(ON)*Qg FOM of 2 8 Ω*nC
forextv.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from forextv.com Daily Mail and Mail on Sunday newspapers.

Vishay siliconixBob deckerPeter henriciCapability in telecomVishay intertechnologyVishay intertechnology incSuperjunction device lowers conductionSwitching lossesIncreases efficiencyThermal capability

Brückenlose Totem-Pole-PFC: SiC und GaN im direkten Vergleich

Brückenlose Totem-Pole-PFC: SiC und GaN im direkten Vergleich
elektroniknet.de - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from elektroniknet.de Daily Mail and Mail on Sunday newspapers.

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Mit diskreten SiC-Transistoren: 200-kW-Umrichter erreicht 99,3 Prozent Effizienz

Mit diskreten SiC-Transistoren: 200-kW-Umrichter erreicht 99,3 Prozent Effizienz
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Percent efficiencyReference designPercent efficiency all picturesSwitching lossesOperating conditionsElectric carகுறிப்பு வடிவமைப்புஇயங்குகிறது நிபந்தனைகள்மின்சார கார்