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ROHM s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off -February 15, 2024 at 05:01 pm EST

Ideal for automotive LED headlamps and other high-speed switching applicationsSanta Clara, CA and Kyoto, Japan, Feb. 15, 2024 ROHM Semiconductor today announced new 100V breakdown Schottky.

Santa claraSchottky barrier diodesGreater miniaturizationSlower lossStandard trench

ROHM s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

ROHM s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
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Santa claraSchottky barrier diodesStandard trenchGreater miniaturizationSlower loss
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