In the realm of modern electronics, semiconductor diodes have emerged as fundamental components with diverse applications. One of their pivotal roles lies in the fields of rectification and voltage regulation, where these tiny devices wield immense power in transforming alternating current (AC) into direct current (DC) and maintaining stable voltage levels.
Similar to other junction diodes, the Schottky Barrier Diode is a type of semiconductor diode that is employed in many electronic applications requiring low voltage and high current operations.
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Abstract
In this paper, a novel ultrahigh voltage gain dc-dc boost converter with expandable diode-capacitor voltage multiplier (VM) cells is presented. The diode-capacitor VM cells and coupled inductors are employed in the presented topology to provide a higher voltage gain. Also, the main and the auxiliary power switches of the presented converter operate with zero voltage switching (ZVS). The coupled inductors leakage inductances control the rates of the current drop in the voltage multiplier diodes, which decreases their reverse recovery losses markedly. Moreover, the voltage stresses on all capacitors and semiconductors are reduced significantly. In this converter, the number of voltage multiplier cells, and the coupled inductors turn ratios provide three degrees of design freedom. These degrees of freedom are used to set the desired voltage stresses of the semiconductors within the desired range and to provide a high voltage gain at optimum duty cycles. The design and theoret