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Isotope-controlled silicon carbide for solid-state quantum devices

At Fraunhofer IISB, a research group is developing optimized base materials and process technologies for solid-state quantum electronics using silicon carbide (SiC). The starting point are SiC layers epitaxially deposited on SiC wafers with precisely defined concentrations for the silicon and carbon isotopes.

A Dual Boost For Optical Delay Scanning

Various applications of pulsed laser sources rely on the ability to produce a series of pulse pairs with a stepwise increasing delay between them.

Quantum pump without crank

Quantum pump without crank
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