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Ultra-high-speed control IC technology maximises performance of GaN devices

Ultra-high-speed control IC technology maximises performance of GaN devices
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ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE)  ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other high-speed switching devices. While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of control ICs, which are responsible…

ROHM Establishes Ultra-High-Speed Control IC Technology

ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices
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