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Electronics engineers successfully integrate MoS₂ transistors on a 200 mm wafer
In recent years, electronics engineers have been trying to design increasingly sophisticated transistors that can be scaled down to smaller sizes. Given the limitations of conventional silicon-based field effect transistors .
Soult ukpyolsi
South korea
Minsu seol
Junyoung kwon
Nature electronics
Seoul national university
Sciencex network
Researchers at samsung advanced institute of technology
Samsung advanced institute
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