MOUNTAIN VIEW, Calif., Oct. 7, 2021 /PRNewswire/ Highlights of this Announcement: The DesignWare HBM3 Controller, PHY, and Verification IP reduces integration risk and maximizes memory performance in 2.5D multi-die systems Low-latency HBM3 Controller with flexible configuration options enhance memory bandwidth Pre-hardened or configurable HBM3 PHY in 5-nm process operates at 7200 Mbps for up to 2X…
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Samsung has started mass-producing its datacentre SSD storage customised for Hyperscale, in the form of the PM9A3 E1.S. Constructed using Samsung’s sixth-generation (1xx-layer) V-NAND, the PM9A3 dramatically improves performance over the fifth-generation V-NAND-based PM983a (M.2), with double the sequential write speed at 3000MB/s, a 40% higher random read speed of 750K IOPS and 150% higher random writes at 160K IOPS.
The new PM9A3 fully complies with the Open Compute Project (OCP) NVMe Cloud SSD specification, enabling SSD providers to design next-generation storage solution with enhanced effectiveness.
“Wider 5G deployment and accelerating growth in IoT devices are fueling a hyperconnected lifestyle, driving the demand for more sophisticated hyperscale data centers,” said Cheolmin Park, vice president of Memory Product Planning at Samsung Electronics.
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