Imec has made significant progress in preparing the High-NA patterning ecosystem for the imec-ASML Joint High-NA Lab, which will be centred around the firs
Imec and ASML show EUV limits
Imec and ASML have demonstrated the ultimate single-exposure patterning capability of today’s 0.33NA NXE:3400 EUV lithography.
Process optimizations have enabled the patterning of dense 28nm pitch line/spaces with an Inpria metal-oxide resist in one single exposure, relevant for high-volume manufacturing. For the first time, optical and e-beam inspections were correlated with electrical data to gain further insights in improving stochastic defectivity – i.e., both breaks and bridges.
In addition, source optimizations have led to printing the smallest pitch possible with the current NXE:3400 scanner (i.e., 24nm pitch line/spaces and 28nm pitch contact holes), allowing for early material development required for high-NA EUV lithography scanners.
Imec Pushes Single-Exposure Patterning Capability of 0.33NA EUVL to its Extreme Limits
Proven correlation between morphological and electrical data on 28nm pitch line/spaces increases understanding of stochastic defectivity impact on device reliability/yield
LEUVEN (Belgium), February 23, 2021 This week, at the 2021 SPIE Advanced Lithography Conference, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and ASML, the world’s leading manufacturer of semiconductor lithography equipment, present several papers that demonstrate the ultimate single-exposure patterning capability of today’s 0.33NA NXE:3400 extreme ultraviolet lithography (EUVL). Process optimizations have enabled the patterning of dense 28nm pitch line/spaces with an Inpria metal-oxide resist in one single exposure, relevant for high-volume manufacturing. For the first time, optical and e-beam inspections were correlated with electrical data to gain further insights in im