This study investigates the use of a specially developed P-I-N diode to measure displacement damage in a silicon substrate caused by irradiation from 400 MeV/u 20Ne, 500 MeV/u 40Ar, 290 MeV/u 12C, and 6, 9, 12, 20 MeV electrons. Various energy levels of heavy ions attenuated by PMMA beam degraders were assessed. The study focuses on the forward voltage shift of the P-I-N diode as an indicator of displacement damage in silicon. Comparisons were made with simulated fluences, and the associated particle displacement Kinetic Energy Released per unit Mass (KERMA) to the silicon substrate.
The investigation revealed that the long base P-I-N diode's response is directly proportional to displacement damage, exhibiting a long dynamic range and independence from particle type, energy, and Linear Energy Transfer (LET). Applying a calibration factor demonstrated good agreement between simulation and experimental values. Diode fading was also assessed, showing a 20% voltage fade after several