A University of Minnesota Twin Cities-led team has developed a first-of-its-kind, breakthrough method that makes it easier to create high-quality metal oxide thin films out of "stubborn" metals that have historically been difficult to synthesize in an atomically precise manner.
A University of Minnesota Twin Cities-led team has developed a first-of-its-kind breakthrough method that makes it easier to create high-quality metal oxide films that are important for various next generation applications such as quantum computing and microelectronics.
A University of Minnesota Twin Cities-led team has developed a first-of-its-kind breakthrough method that makes it easier to create high-quality metal oxide films that are important for various next generation applications such as quantum computing and microelectronics.
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When you save an image to your smartphone, those data are written onto tiny transistors that are electrically switched on or off in a pattern of bits to represent and encode that image. Most transistors today are made from silicon, an element that scientists have managed to switch at ever-smaller scales, enabling billions of bits, and therefore large libraries of images and other files, to be packed onto a single memory chip.
But growing demand for data, and the means to store them, is driving scientists to search beyond silicon for materials that can push memory devices to higher densities, speeds, and security.