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Efficient Engineering Marvels: The Significance
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Two-Dimensional (2D) III-V nitrides are anticipated to exhibit exceptional material properties with wide-ranging technological significance. We report, ion beam synthesis of buried 2D Aluminium Gallium Nitride structures with enhanced piezoelectric modulus. We propose three criteria for the formation of 2D AlGaN layers by ion implantation. The 2D layers were synthesized by Xe implantation into epitaxially grown, strain-free Al0.5Ga0.5N thin films and their presence was confirmed by scanning transmission electron microscopy. Alternating planar and buckled 2D III-Nitride layers in conjunction with a rapid change of polarity of the buckled layer confirms the weak interaction between the individual layers. Rutherford backscattering, in conjunction with piezoelectric force microscopy was used to identify the optimum Xe dose to induce maximum enhancement of piezoelectric modulus. Our results are supported by X-ray diffraction to quantify the macroscopic strain of the implanted film and Monte
Magnetism in layered two dimensional materials has attracted extensive interest. In this work, a variety of concentrations of Co dopants (1, 2 and 4 at.%) were doped into MoTe2 single crystal by ion implantation. Magnetic results indicate that pure MoTe2 displays a diamagnetic behavior. A small amount of Co doping induces a very high saturation magnetization. 4 % Co doping exhibits a saturation magnetization as high as 2231 emu/cm3, higher than pure metallic Fe (1958 emu/cm3). In addition, an outsized coercivity of 11 kOe was also detected in the 2 at.% Co doped MoTe2 sample, which may be a consequence of doping-induced defects in the lattice structure, stress, anisotropic geometry of Co-Te ions and pinning effects by the defects in-between the ions. First principles density functional theory calculations reveal that doping-induced structural defects, including substitutional and interstitial Co, nanoholes as well as interstitial Mo, are responsible for the high magnetization.
Six critical steps are involved in the manufacturing of semiconductors. These steps include deposition, photoresist, lithography, etch, ionization and packaging. This article discusses several ionization processes.
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