Sponsored by MonocromMay 11 2021
Edge-emitting semiconductor laser arrays are also known as laser bars. These devices are most certainly the most widely known and widespread architecture in high-power diode lasers (HPDLs).
When employed under an electron-pumping scheme, these structures are currently able to generate up to 500 W of CW optical power while maintaining an overall active material volume of less than 0.01 mm
3.
While the electro-optical efficiency of these devices can comfortably surpass 50% - particularly with GaAlAs- and InGaAs-based diode lasers - the portion of energy that is not converted into light is almost as high.
This translates into a significant amount of energy that has to be dissipated from the laser device as heat; otherwise, the active medium would likely melt in a matter of microseconds.