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Centre for Nano Science and Engineering and Department of Electrical Engineering produce 8A, 200V normally-off cascode GaN-on-Si HEMT

Srinivasan raghavanManish mandalDigbijoy nathDigbijoyn nathKaushik basuAshutosh vishwakarmaIndian institute of scienceIndian institute of science iiscIisc centre for nano scienceNano missionDepartment of electrical engineeringIndian instituteMicroelectronic engineeringNano scienceTwo inch gan on siliconElectrical engineering