The electrostrictive effect, which induces strain in ferroelectric ceramics, offers distinct advantages over its piezoelectric counterpart for high-precision actuator applications, including anhysteretic behavior even at high frequencies, rapid reaction times, and no requirement for poling. Historically, commercially available electrostrictive materials have been lead oxide-based. However, global restrictions on the use of lead in electronic components necessitate the exploration of lead-free electrostrictive ceramics with a high strain performance. Although various engineering strategies for producing materials with high strain have been proposed, they typically come at the expense of increased strain hysteresis. Here, we describe the extraordinary electrostrictive response of (Ba0.95Ca0.05)(Ti0.88Sn0.12)O3 (BCTS) ceramics with ultrahigh electrostrictive strain and negligible hysteresis achieved through texture engineering leveraging the anisotropic intrinsic lattice contribution. The
Among the lead-free compositions identified as potential capacitor materials, BiScO3-BaTiO3 (BS-BT) relaxor dielectrics exhibit good energy storage performance. In this research, 0.4BS-0.6BT is considered as the parent composition, with NaNbO3 (NN) addition intended to substitute the A and B site cations. The NN modified BS-BT ceramics exhibit excellent temperature stability in terms of their dielectric properties, with the room-temperature dielectric constant on the order of 500–1 000 and variation less than 10% up to 400 °C. In addition, NN has a high band-gap energy leading to increased breakdown strength and energy storage properties in modified compositions. The highest breakdown strength was achieved for 0.4BS-0.55BT-0.05NN, being on the order of 430 kV/cm, and a high energy density of 4.6 J/cm3 with high energy efficiency of 90% was simultaneously achieved. Of particular importance is that the variation of the energy density was below 5% due to the temperature-insensitive die
Enhanced piezoelectric, dielectric properties and thermal stability in ternary relaxor-PbTiO3 based ferroelectric crystals are expected to develop the next-generation of electromechanical devices. However, due to their increased disorder compared to other ferroelectrics, designing a controllable phase boundary structure and engineered domain remains a challenging task. Here, we construct a monoclinic heterophase coexisting in a ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal with optimized composition and an ultrahigh piezoelectric coefficient of 1400 pC N-1, to quantify the correlation between spontaneous nanopolarity and phase heterogeneity, in an attempt to understand the origin of the exceptional functionalities. By designing an in situ high-resolution spectroscopic-microscopic technique, we have observed Ma and Mc heterophase mixtures spatially separated by the monoclinic heterophase boundary (MHB), which are responsible for the ferroelectric-dominated and relaxor-
Abstract
Domain walls’ vibration and motion contribute significantly to the exceptionally large dielectric and piezoelectric response of ferroelectric materials. Yet, the specific length scales at which domain walls impact characteristic parameters remain largely unprobed. Previous studies examining correlation of domain wall proximity and functional response at the micrometer or submicrometer scales are often based on (locally or globally) “written” domains. The stability of such domains can be affected by many factors, resulting in convoluted effects of domain wall proximity and their stability when studying the local functional response. Herein, the effects of preexisting domain walls on the nanoscale polarization switching in a [001]-cut relaxor-ferroelectric (Formula presented.) single crystal are probed by piezoresponse force microscopy. It is found that domain wall proximity has limited impact on polarization switching for locations ⪝300 nm away. While a transition fr