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STMicroelectronics Drives the Future of EVs and Industrial Applications with New Silicon-Carbide Devices

ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for e-mobility and energy-efficient industry Continued long-term investment in SiC positions ST for future growth  Geneva, Switzerland, December 9, 2021 - STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, is introducing its third generation of STPOWER silicon-carbide (SiC)…

STMicroelectronics Drives the Future of EVs and Industrial

STMicroelectronics Drives the Future of EVs and Industrial Applications with New Silicon-Carbide Devices ST’s latest-generation silicon-carbide (SiC).

STMicroelectronics introducing third generation of SiC power devices

STMicroelectronics is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs for power control for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are critical. The market leader in SiC power MOSFETs, ST has incorporated new and advanced design know-how to open up even more.

ST unveils new silicon-carbide devices

STMicroelectronics is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs, targeting electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria.

STMicroelectronics Drives the Future of EVs and Industrial Applications with New Silicon-Carbide Devices

STMicroelectronics Drives the Future of EVs and Industrial Applications with New Silicon-Carbide Devices
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