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4DS has demonstrated Interface Switching ReRAM cells at a 40 nanometer geometry, representing significant progress in scalability and yield.

San franciscoUnited statesBrian wangCrossbar incWestern digitalDs memories ltdHead of researchSingularity universityHewlett packardInterface switchingWest perthWestern australiaAdesto technologiesGlobal foundriesInterface switching memoryFuturist thought leader