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Samsung develops next-generation DRAM memory ANI 12 May 2021, 12:18 GMT+10 Seoul [South Korea], May 12 (ANI/Global Economic): Samsung Electronics announced Tuesday that it has developed DRAM memory technology based on the next-generation interface Compute Express Link (CXL) for the first time in the industry. Samsung Electronics has secured the next-generation semiconductor technology leadership through the development of high-capacity, high-bandwidth DRAM technology that can dramatically improve the performance of data centers in terms of artificial intelligence, machine learning, and big data. Samsung Electronics has verified the CXL-based DRAM memory developed this time on Intel s platform to secure the base technology for a large-capacity DRAM solution required by the next-generation data center, and expand cooperation with major global data centers and cloud companies.

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