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Resident dies in Saranac Lake apartment building fire

Vishay Intertechnology IGBT Power Modules in Redesigned INT-A-PAK Package Reduce Conduction and Switching Losses

21.02.2024 - Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages MALVERN, Pa., Feb. 21, 2024 (GLOBE NEWSWIRE) - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new .

Vishay Intertechnology 30 V N-Channel MOSFET With Source Flip Technology Delivers Best in Class RDS(ON) Down to 0 71 mΩ in PowerPAK® 1212-F

MALVERN, Pa., Feb. 14, 2024 Vishay Intertechnology, Inc. today introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced.

Vishay Intertechnology High Speed PIN Photodiode Delivers Enhanced Sensitivity for Visible Light in Compact 2 0 mm x 1 8 mm x 0 6 mm SMD Package

MALVERN, Pa., Feb. 01, 2024 Vishay Intertechnology, Inc. today broadened its optoelectronics portfolio with the introduction of a new high speed silicon PIN photodiode with enhanced sensitivity.

Vishay Intertechnology Upgrades TSOP18xx, TSOP58xx, and

Devices Offer Drop-in Replacements for Existing Solutions With Lower Current Consumption, Wider Voltage Range, and Improved ESD Robustness, Dark-Ambient.

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