21.02.2024 - Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages MALVERN, Pa., Feb. 21, 2024 (GLOBE NEWSWIRE) - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new .
MALVERN, Pa., Feb. 14, 2024 Vishay Intertechnology, Inc. today introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced.
MALVERN, Pa., Feb. 01, 2024 Vishay Intertechnology, Inc. today broadened its optoelectronics portfolio with the introduction of a new high speed silicon PIN photodiode with enhanced sensitivity.
Devices Offer Drop-in Replacements for Existing Solutions With Lower Current Consumption, Wider Voltage Range, and Improved ESD Robustness, Dark-Ambient.