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Structural, Magnetic, and Transport Properties of MnNiGa Ribbon by Mengru Chen, Shulei Zhao et al

The magnetic properties and the existence of spin reorientation have been systematically investigated in MnNiGa ribbons. The thermomagnetic curve reveals that as-spun and annealed ribbons undergo a two-step magnetic structural transformation and the magnetic properties of the annealed ribbons are improved. The splitting behaviour of zero-field-cooled and filed-cooled (ZFC-FC) curve shows that the ribbon has occurred a spin reorientation transformation. The ZFC and isothermal magnetization curves tested by changing the direction of the magnetic field illustrate the existence of magnetic anisotropy, and the direction of H// is easily magnetized. In the direction of easy magnetization, the value of magnetic entropy is about 1.54 J/kg K. The easy magnetization direction is proved to be in-plane by the decrease of the magnetic domain phase shift. It is clear that the magnetoresistance is negative in all temperature ranges and the nonlinear variation at low fields accounts for the presence o

Anomalous hall effectAgnetic domainMagnetic propertyNniga ribbons

MIT Physicists Uncover Fractional Charge Phenomenon in Graphene Layers

MIT's Long Ju uncovered anomalous fractional charge in graphene, a material previously not expected to exhibit such behavior, focusing on pentalayer graphene, consisting of five slightly staggered sheets arranged like a staircase.

United kingdomUnited statesMaddie meyer gettyUniversity of washingtonMassachusetts institute of technology onInno floresTech timesVibrating capsulePotential breakthroughGetty imagesMassachusetts instituteSustaining electron fractionalizationBased overcoat replacedNobel prizeBreakthrough tamper proofMit physicists

Chromium(III) Telluride As Ferromagnetic Material With Tunable Anomalous Hall Effect

Chromium(III) Telluride As Ferromagnetic Material With Tunable Anomalous Hall Effect
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Yao wenQuentin guilletNature communicationsHall effectAnomalous hall effectShang chiPhysical review materials

Observation of large intrinsic anomalous Hall conductivity in polycrys by Wafa Afzal, Zengji Yue et al

Topological antiferromagnets have a significant role to play in the modern day electronics and spintronics due to the presence of peculiar symmetries and magnetically driven large anomalous transport behaviour. We report the observation of anomalous Hall effect in Mn3Sn polycrystalline thin films deposited on Al2O3 substrate with a large anomalous Hall conductivity of 65 (Ωcm)−1 at 3 K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment present in this material. The longitudinal resistivity decreases sufficiently for the thin films as compared to the polycrystalline bulk sample used as the target for the film deposition. The anomalous Hall resistivity and conductivity decreases almost linearly with the increase in the temperature. A negative magnetoresistance is observed for all the measured temperatures with the negative decrease in the magnitude with the increase in temperature.

Anomalous hall effectBerry curvatureThin filmsTopological materialsWeyl semimetals

Magnetic and Electrical Transport Properties of Selected Topological M by Wafa Afzal

The demand for more efficient and smaller sized electronic devices with increased functionality has driven the semiconductor industry for decades. Most of the information processing and electrical circuitry has been based on the complementary metal oxide semiconductor (CMOS) devices until the recent years. The miniaturization of these devices, however, has reached its functional limit and newer ways are required to keep up with the increasing demands, computing becoming vastly used and even more relevant with the changing world. To overcome this problem, many approaches have been taken to upgrade the present electronic and computing devices including multi-core processing and the incorporation of new materials. This manoeuvre towards the modern digital logic technologies beyond CMOS has been striving for the technological advancement in the modern electronics. Topological materials are the quantum materials with linear electronic distributions and protected edge/surfaces states where e

Pulsed laser depositedWeyl semimetalsAnomalous hall effectThin filmsPulsed laser deposition