EPC is shipping the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x
Navitas Semiconductor Corporation (via Public) / Compound Semiconductor: Navitas Plans For GaN Dominance publicnow.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from publicnow.com Daily Mail and Mail on Sunday newspapers.
EPC has 40V GaN fets for low-voltage servers electronicsweekly.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from electronicsweekly.com Daily Mail and Mail on Sunday newspapers.
Efficient Power Conversion (EPC) of El Segundo has brought out a family of rad-hard GaN transistors and ICs. The EPC7014 - a 60 V, 340 mΩ, 4 APulsed, rad-h
EPC launches demonstration board powered by GaN FETs EPC is making available the EPC9137, a 1.5 kW, two-phase 48V â 12V bidirectional converter that operates with 97 % efficiency in a very small footprint.
The design of this demonstration board is scalable, whereby two converters can be paralleled to achieve 3 kW or three converters can be paralleled to achieve 4.5 kW. The board features four EPC2206 100 V eGaN FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.
By 2025, one of every 10 vehicles sold worldwide is projected to be a 48 V mild hybrid. These 48 V systems are able to boost fuel efficiency and deliver four times the power without increasing engine size, and reduce carbon-dioxide emissions without increasing system costs. These systems will require a 48V â 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. The design priorities for these systems are size, cost, a