TiO2 Thin Films and O2 Plasma Treatment for Next-Gen Memory Devices

In a recent study published in the journal Vacuum, researchers from South Korea attempted to minimize the leakage current problem with ultrathin metal oxide insulation layers in memory devices such as dynamic random-access memory (DRAM).

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South Korea ,Susha Cheriyedath ,Bismay Prakash Routfeb , ,Bismay Prakash ,