Samsung Announces 3nm Process Node, the First with Gate-All-Around FETs

It appears that Samsung is the – ahem – first out of the gate with a gate-all-around (GAA) FET IC process technology. The company recently announced initial semiconductor production with its 3nm process node. Samsung’s trademarked name for its version of a GAAFET is “MBCFET,” which stands for “Multi-Bridge-Channel FET.” Since a picture is often…

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