Infotech > IT news
21 January 2021
Scientists at the Institute of Nano Science and Technology (INST), Mohali, Punjab have produced electron gas with ultra-high mobility, which can speed up transfer of quantum information and signal from one part of a device to another and increase data storage density and memory.
The research on high-mobility 2d-electron gas(2DEG) at the interface of two insulating oxide layers may open up a new field of device physics, especially in the field of quantum technology applicable for next-generation data storage media and quantum computers
The need for attaining new functionalities in modern electronic devices has led to the manipulation of property of an electron called spin degree of freedom along with its charge. This has given rise to an altogether new field of spin-electronics or ‘spintronics’. It has been realised that a phenomenon called the ‘Rashba effect’, which consists of splitting of spin-bands in an electronic system, might play a key role in spintronic devices.