tmrFebruary 18, 2021
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GaN (Gallium Nitride) on diamond is an alternative material to pure GaN in the field of high power semiconductors and electronics. There are immense opportunities for new product innovation and development in GaN on diamond based semiconductor products in the near future. This is mainly due to GaN on diamond semiconductor substrates offering different advantages such as high thermal conductivity, superior high frequency handle capacity, and high energy efficiency & flexibility, which is anticipated to drive the market in the coming years. Increasing demand for RF power applications across aerospace & defense, high power electronics, and research & development has led to adoption of GaN on diamond semiconductor substrates globally. The high thermal conductivity, high frequency handling capacity, and high energy efficiency and flexibility makes its suitable for manufacturing semiconductor devices. The market for GaN on diamond semiconductor substrates is forecast to quickly grow to US$ 19,162.4 Thousand by 2026 from US$ 7,777.0 Thousand in 2017, recording a CAGR of 11.2%.