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IMAGE: In the proposed method, carrier lifetime measurements are made in the region were the excitation and probe lasers intersect, which progressively varies as the position of the sample is changed. view more
Credit: Photo courtesy: Masashi Kato from Nagoya Institute of Technology
Silicon carbide (SiC), a versatile and resistant material that exists in multiple crystalline forms, has attracted much attention thanks to its unique electronic properties. From its use in the first LED devices, to its applications in high-voltage devices with low power losses, SiC displays exceptional semiconductor behavior. So far, the operating voltages for unipolar SiC devices are below 3.3 kV. Though useful for the electronic systems of cars, trains, and home appliances, unipolar SiC-based devices cannot be used in power generation and distribution systems, which operate at voltages above 10 kV.