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Importantly, the new technology lends itself to commercial-scale production, because thousands of devices can be made from a single wafer using industry standard complementary metal oxide semiconductor (CMOS)-compatible techniques.
“Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms,” the researchers stated.
The key challenge in making the device was that the semiconductor laser and the resonator, which generates the comb, had to be built on different material platforms. The lasers can be made only with materials from the III and V groups on the Periodic Table, such as indium phosphide, and the best combs can be made only from silicon nitride.
Neue Ära der Auflösung beginnt
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