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40V 3mΩ GaN power transistor, and gate drive design assistance

40V 3mΩ GaN power transistor, and gate drive design assistance Efficient Power Conversion (EPC) is aiming at USB chargers and thin point-of-load converters with a 40V 3mΩ enhancement-mode GaN power transistor. Called EPC2055 it is a “good example of the rapid evolution of GaN FET technology”, according to company founder and CEO According to Alex Lidow.  This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost.” Although GaN power transistors which are HEMTs, have no inherent avalanche capability, the device is rated to handle up to 10,000 5ms pulses to 48V.

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