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Breakthrough in Memory Technology: Next-Generation Optoelectronic Memory with Tellurene
/PRNewswire/ Despite rapid progress, conventional floating-gate nonvolatile memory devices still face critical challenges. Optoelectronic memory devices.
Soult ukpyolsi
South korea
Waals heterostructure
Sunggeun cho
Division of physics
Semiconductor science
Dongguk university
Tellurene floating gate
Wide range
Multi bit optoelectronic
Computer amp electronics
Stem science
Artificial intelligence
Olls and research
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