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Multilevel topology reference demo addresses GaN fulfilling EV and industrial needs

Multilevel topology reference demo addresses GaN fulfilling EV and industrial needs
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Ohm hemtsDenis marconInnoscience innogan hemtsInnoscience technologyBern university of applied sciencesBern universityApplied sciencesProfessor timoth

Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

09th May 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience’s 650V InnoGaN™ HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers,…

Denis marconInnoscience innogan hemtsInnoscience technologyBern university of applied sciencesBern universityApplied sciencesActive neutral point clampedGeneral manager

Process and Control Today | Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

Process and Control Today | Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements
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Denis marconInnoscience innogan hemtsUniversity of bernBern university of applied sciencesInnoscience technologyBern universityApplied sciencesActive neutral point clampedGeneral manager

Innoscience to demonstrate that GaN is the best power solution for an increasingly wide variety of applications at PCIM 2023 – CIE

Innoscience to demonstrate that GaN is the best power solution for an increasingly wide variety of applications at PCIM 2023 – CIE
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Denis marconUniversity of leuven kuBern universityVegan coInnoscience technology

New Electronics - Reference demo addresses 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

Innoscience Technology, a developer of high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has collaborated with the Bern University of Applied Sciences (BFH) in the development of a reference demo that employs the company's 650V InnoGaN HEMT devices in a multilevel topology to address 850VDC applications.

Innoscience innogan hemtsDenis marconActive neutral point clampedGeneral manager