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Brewer Science named greater St Louis top workplaces seven years running

RDN REPORTS rdnnews@gmail.com Brewer Science, Inc. has been awarded the Top Workplaces 2021 honor by St. Louis Post-Dispatch Top Workplaces.  The list is based solely on employee feedback gathered through a third-party survey administered by employee engagement technology partner Energage LLC.  The anonymous survey measures 15 culture drivers that are vital to the success of any organization, including alignment, execution and connection. Brewer Science was first recognized with this award in 2012, and since then has won the Top Workplace Award nine times - 2012, 2013, 2015, 2016, 2017, 2018, 2019, 2020 and 2021.  The sustained accolades of this award come as no surprise to the hundreds of employees who work at Brewer Science, as they were the ones who nominated their company.

Brewer Science s contribution to Missouri State University Foundation inspires technology innovation - News

Gift will expand Jordan Valley Innovation Center. Brewer Science, Inc. completed a significant, corporate contribution to Missouri State University Foundation as part of its “Onward, Upward” campaign. With this gift, Brewer Science is supporting the construction of the Jordan Valley Innovation Center (JVIC) building expansion that is expected to be completed in early 2022. The 30,000 square-foot addition will serve as the main entrance to JVIC and will be known as the Brewer Science Innovation Annex. A partner in innovation Brewer Science was a founding affiliate of JVIC in 2007 and has partnered with MSU since 2004. Dr. Terry Brewer, founder and CEO of Brewer Science, was instrumental in developing the innovation partnership model for JVIC.

DSA patterns line pitches down to 18nm

DSA patterns line pitches down to 18nm Imec has demonstrated the capability of directed self-assembly (DSA) to pattern line/spaces with a pitch as small as 18nm, using a high-chi block copolymer (high-χ BCP) based process under high volume manufacturing (HVM) conditions. An optimized dry-etch chemistry was used to successfully transfer the pattern into an underlying thick SiN layer – which will enable further defectivity inspection. These results confirm the potential of DSA to complement traditional top-down patterning for the industrial fabrication of sub-2nm technology nodes. The further miniaturization of devices will require the patterning of features that have critical pitches below 20nm. For these small feature sizes, the traditional top-down lithography patterning is increasingly challenged with issues that are inherent to the reaction of the photosensitive materials with light – such as stochastic printing failures and line-edge/line-width roughness (LER/LWR).

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