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Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

09th May 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience’s 650V InnoGaN™ HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers,…

Process and Control Today | Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

Process and Control Today | Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements
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New Electronics - Reference demo addresses 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

Innoscience Technology, a developer of high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has collaborated with the Bern University of Applied Sciences (BFH) in the development of a reference demo that employs the company's 650V InnoGaN HEMT devices in a multilevel topology to address 850VDC applications.

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